We are researching a way to fully exploit the potential of silicon to its maximum through the use of carrier selective junctions. This will allow the extraction of light generated charge carriers without recombination. Such contacts allow simple device architecture – non patterned double-side contacted solar cells, which can be fabricated by upgrading existing production lines.
A unique consortium of experienced industrial actors will collaborate with a set of world-leading institutes to target efficiencies >25.5% on large area cell and >22% at module level while demonstrating pilot manufacturing readiness at competitive costs.
The DISC device architecture enables reduction of non-abundant material consumption, enhancement of the energy yield, and a modern module design ensuring outstanding durability. In such a way DISC will provide the key elements for achieving very low levelized costs of electricity in Europe with potential for further reduction, making solar one of the cheapest electricity sources.
At the end of the project, we will organize a final workshop with NextBase and Ampere project on September 25 in Chambery, France. You are cordialy invited to attend the workshop.
The M30 STC Meeting was held at MECO in Drunen, The Netherlands. Several highlights were achieved.
The DISC project is looking forward to welcome you at SiliconPV 2019 in Leuven. We will be present with two talks and three posters.